dmn32d2lv document number: ds31121 rev. 8 - 2 1 of 6 www.diodes.com march 2015 ? diodes incorporated dmn32d2lv dual n-channel enhancement mode field effect transi stor features ? dual n-channel mosfet ? low on-resistance ? very low gate threshold voltage, 1.2v max ? low input capacitance ? fast switching speed ? low input/output leakage ? ultra-small surface mount package ? esd protected gate ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) mechanical data ? case: sot-563 ? case material: molded plastic, ?green? molding com pound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.006 grams (approximate) ordering information (note 4) part number case packaging dmn32d2lv-7 sot-563 3,000/tape & reel notes: 1. no purposely added lead. fully eu directi ve 2002/95/ec (rohs) & 2011/65/eu (rohs 2) complian t. 2. see http://www.diodes.com/quality/lead_free.htm l for more information about diodes incorporated?s definitions of halogen- and antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <90 0ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at htt p://www.diodes.com/products/packages.html. marking information sot-563 date code key year 2007 2008 2009 2010 2011 2012 code u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot-563 top view schematic and transistor diagram top view s 1 d 1 d 2 s 2 g 1 g 2 esd protected dv = product type marking code ym = date code marking y = year (ex: u = 2007) m = month (ex: 9 = september) dv ym s 1 d 2 g 1 d 1 s 2 g 2
dmn32d2lv document number: ds31121 rev. 8 - 2 2 of 6 www.diodes.com march 2015 ? diodes incorporated dmn32d2lv maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain source voltage v dss 30 v gate-source voltage v gss 10 v drain current (note 5) i d 400 ma thermal characteristics (@ t a = +25c, unless otherwise specified.) total power dissipation (note 5) p d 400 mw thermal resistance, junction to ambient (note 5) r ja 313 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6 ) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current @ t j = +25c i dss ? ? 1 a v ds = 30v, v gs = 0v gate-body leakage @ t j = +25c i gss ? ? ? 1 10 500 100 a na na v gs = 10v, v ds = 0v v gs = 5v, v ds = 0v v gs = 2.5v, v ds = 0v gate-body leakage (note 7) @ t j = +105c @ t j = +125c i gss ? 8 15 100 100 na na v gs = 2.5v, v ds = 0v on characteristics (note 6 ) gate threshold voltage v gs(th) 0.6 ? 1.2 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? ? ? ? ? ? 2.2 1.5 1.2 v gs = 1.8v, i d = 20ma v gs = 2.5v, i d = 20ma v gs = 4.0v, i d = 100ma forward transconductance |y fs | 100 ? ? ms v ds =10v, i d = 0.1a source-drain diode forward voltage v sd 0.5 ? 1.4 v v gs = 0v, i s = 115ma dynamic characteristics (note 7 ) input capacitance c iss ? 39 ? pf v ds = 3v, v gs = 0v f = 1.0mhz output capacitance c oss ? 10 ? pf reverse transfer capacitance c rss ? 3.6 ? pf switching time turn-on time t on ? 11 ? ns v dd = 5v, i d = 10 ma, v gs = 5v turn-off time t off ? 51 ? ns notes: 5. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes i nc. suggested pad layout document ap02001, which ca n be found on our website at http://www.diodes.com. 6. short duration pulse test used to minimize sel f-heating effect. 7. guaranteed by design. not subject to productio n testing.
dmn32d2lv document number: ds31121 rev. 8 - 2 3 of 6 www.diodes.com march 2015 ? diodes incorporated dmn32d2lv
dmn32d2lv document number: ds31121 rev. 8 - 2 4 of 6 www.diodes.com march 2015 ? diodes incorporated dmn32d2lv 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , s t a t i c d r a i n - s o u r c e on-resistance (normalized) ds(on) fig. 7 normalized static drain-source on-resistance vs. ambient temperature v = 4v i = 100ma gs d v = 2.5v i = 20ma gs d v = 1.8v i = 20ma gs d 0 10 20 30 40 50 0 5 10 15 20 v , drain-source voltage (v) ds c , c a p a c i t a n c e ( p f ) t fig. 10 typical capacitance c iss c oss c rss f = 1 mhz 0.1 1 10 100 1000 10000 0 2 4 6 8 10 12 v , gate-source voltage (v) gs fig.11 gate-source leakage current vs voltage i , l e a k a g e c u r r e n t ( n a ) gss t = 105c a t = 125c a t = 25c a v , gate-source voltage (-v) gs fig.12 gate-source leakage current vs voltage i , l e a k a g e c u r r e n t ( n a ) gss 0.1 1 10 100 1000 10000 0 2 4 6 8 10 12 t = 105c a t = 125c a t = 25c a
dmn32d2lv document number: ds31121 rev. 8 - 2 5 of 6 www.diodes.com march 2015 ? diodes incorporated dmn32d2lv package outline dimensions please see ap02002 at http://www.diodes.com/datashe ets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datashe ets/ap02001.pdf for the latest version. sot - 563 dim min max typ a 0.15 0.30 0.20 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d - - 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.55 0.60 0.60 l 0.10 0.30 0.20 m 0.10 0.18 0.11 all dimensions in mm dimensions value (in mm) z 2.2 g 1.2 x 0.375 y 0.5 c1 1.7 c2 0.5 a m l b c h k g d x z y c1 c2 c2 g
dmn32d2lv document number: ds31121 rev. 8 - 2 6 of 6 www.diodes.com march 2015 ? diodes incorporated dmn32d2lv important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranti es of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisd iction). diodes incorporated and its subsidiaries reserve th e right to make modifications, enhancements, improv ements, corrections or other changes without further notice to this document and any pro duct described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any cu stomer or user of this document or products describ ed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products pur chased through unauthorized sales channel. should customers purchase or use diodes incorporate d products for any unintended or unauthorized appli cation, customers shall indemnify and hold diodes incorporated and its representatives ha rmless against all claims, damages, expenses, and a ttorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized appl ication. products described herein may be covered by one or more united states, international or foreign patent s pending. product names and markings noted herein may also be covered by one or more uni ted states, international or foreign trademarks. this document is written in english but may be tran slated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes i ncorporated. life support diodes incorporated products are specifically not a uthorized for use as critical components in life su pport devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to per form when properly used in accordance with instruct ions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a lif e support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affe ct its safety or effectiveness. customers represent that they have all necessary ex pertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsi ble for all legal, regulatory and safety-related re quirements concerning their products and any use of diodes incorporated products in such safety- critical, life support devices or systems, notwiths tanding any devices- or systems-related information or support that may be provided by diod es incorporated. further, customers must fully ind emnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such saf ety-critical, life support devices or systems. copyright ? 2015, diodes incorporated www.diodes.com
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